TTD1409B,S4X
TRANS NPN DARL 400V 20UA TO220Manufacturer: Toshiba Semiconductor and Storage
Categories: Single Bipolar Transistors
Quality Control: Learn More
Bipolar (BJT) Transistor NPN - Darlington 400 V 6 A 2 W Through Hole TO-220SIS
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 16 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Darlington |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 40mA, 4A |
| Current - Collector Cutoff (Max) | 20µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 600 @ 2A, 2V |
| Frequency - Transition | - |
| Supplier Device Package | TO-220SIS |
| Current - Collector (Ic) (Max) | 6 A |
| Voltage - Collector Emitter Breakdown (Max) | 400 V |
| Power - Max | 2 W |
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