TTC012(Q)
TRANS NPN 375V 2A PW-MOLD2Manufacturer: Toshiba Semiconductor and Storage
Categories: Single Bipolar Transistors
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Toshiba Semiconductor and Storage's TTC012-Q- is an NPN bipolar junction transistor (BJT) designed for applications requiring high voltage and current handling. This component features a maximum collector-emitter breakdown voltage of 375V and a continuous collector current capability of 2A. The transistor exhibits a typical DC current gain (hFE) of 100 at 300mA and 5V. With a maximum power dissipation of 1.1W and an operating junction temperature of up to 150°C, it is suitable for demanding power switching and amplification tasks. The device is housed in a PW-MOLD2 package, also known as TO-251-3 Short Leads or IPAK, facilitating through-hole mounting. Industries such as industrial automation, power supplies, and consumer electronics commonly utilize components with these specifications.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 62.5mA, 500mA |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 300mA, 5V |
| Frequency - Transition | - |
| Supplier Device Package | PW-MOLD2 |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 375 V |
| Power - Max | 1.1 W |