TTC011B,Q
PB-FPOWERTRANSISTORTO-126NPC=10WManufacturer: Toshiba Semiconductor and Storage
Categories: Single Bipolar Transistors
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Toshiba Semiconductor and Storage TTC011B-Q is an NPN bipolar junction transistor (BJT) designed for power switching and amplification applications. This device offers a collector-emitter breakdown voltage (Vce) of 230 V and a continuous collector current (Ic) capability of 1 A. With a transition frequency (fT) of 100 MHz, it is suitable for moderate frequency operations. The TTC011B-Q features a maximum power dissipation of 1.5 W and a saturation voltage (Vce(sat)) of 1.5 V at 500 mA collector current and 50 mA base current. It also exhibits a low collector cutoff current (Icbo) of 200 nA. The DC current gain (hFE) is a minimum of 100 at 100 mA collector current and 5 V collector-emitter voltage. This component is supplied in a TO-126N (TO-225AA) package for through-hole mounting and is available in tray packaging. Typical industry applications include power supplies, general-purpose switching, and audio amplification circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | TO-225AA, TO-126-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 200nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 100mA, 5V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | TO-126N |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 230 V |
| Power - Max | 1.5 W |
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