TTC009,F(M
TRANS NPN 80V 3A TO220NISManufacturer: Toshiba Semiconductor and Storage
Categories: Single Bipolar Transistors
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Toshiba Semiconductor and Storage's NPN Bipolar Junction Transistor (BJT), part number TTC009-F-M, is a high-performance component designed for demanding applications. This transistor offers a collector-emitter breakdown voltage of 80V and a maximum continuous collector current of 3A, with a power dissipation of 2W. It features a transition frequency of 150MHz and a minimum DC current gain (hFE) of 100 at 500mA and 5V. The saturation voltage (Vce(sat)) is specified at 500mV maximum for an Ic of 1A driven by 100mA of base current. The TTC009-F-M is housed in a TO-220NIS package, suitable for through-hole mounting and capable of operating at junction temperatures up to 150°C. This component is frequently utilized in power switching, amplification, and general-purpose discrete applications across various industrial sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 500mA, 5V |
| Frequency - Transition | 150MHz |
| Supplier Device Package | TO-220NIS |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 2 W |
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