TTC009,F(J
TRANS NPN 80V 3A TO220NISManufacturer: Toshiba Semiconductor and Storage
Categories: Single Bipolar Transistors
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Toshiba Semiconductor and Storage NPN Bipolar Junction Transistor, part number TTC009-F-J. This component is rated for an 80V collector-emitter breakdown voltage and a maximum collector current of 3A. It features a transition frequency of 150MHz and a power dissipation of 2W. The minimum DC current gain (hFE) is 100 at 500mA and 5V. Saturation voltage (Vce) is specified at a maximum of 500mV with 100mA base current and 1A collector current. The collector cutoff current (ICBO) is a maximum of 100nA. This device is housed in a TO-220NIS package with through-hole mounting. It is suitable for applications in power switching and amplification, commonly found in industrial and automotive systems. The operating junction temperature range is up to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 500mA, 5V |
| Frequency - Transition | 150MHz |
| Supplier Device Package | TO-220NIS |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 2 W |
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