TTA008B,Q
PB-F POWER TRANSISTOR TO-126 PC=Manufacturer: Toshiba Semiconductor and Storage
Categories: Single Bipolar Transistors
Quality Control: Learn More
Bipolar (BJT) Transistor PNP 80 V 2 A 100MHz 1.5 W Through Hole TO-126N
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | TO-225AA, TO-126-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 500mA, 2V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | TO-126N |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 1.5 W |
Request a Quote
Clients Also Buy
2SD1407A-Y(F)
TRANS NPN 100V 5A TO220NIS
TTC012(Q)
TRANS NPN 375V 2A PW-MOLD2
2SA1162S-Y, LF(D
TRANS PNP 50V 0.15A SMINI
