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TTA006B,Q

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TTA006B,Q

PB-F POWER TRANSISTOR TO-126N PC

Manufacturer: Toshiba Semiconductor and Storage

Categories: Single Bipolar Transistors

Quality Control: Learn More

Bipolar (BJT) Transistor PNP 230 V 1 A 70MHz 1.5 W Through Hole TO-126N

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: TrayDatasheet:
Technical Details:
PackagingTray
Package / CaseTO-225AA, TO-126-3
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.5V @ 50mA, 500mA
Current - Collector Cutoff (Max)200nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 100mA, 5V
Frequency - Transition70MHz
Supplier Device PackageTO-126N
Current - Collector (Ic) (Max)1 A
Voltage - Collector Emitter Breakdown (Max)230 V
Power - Max1.5 W

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