TTA004B,Q
TRANS PNP 160V 1.5A TO126NManufacturer: Toshiba Semiconductor and Storage
Categories: Single Bipolar Transistors
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Bipolar (BJT) Transistor PNP 160 V 1.5 A 100MHz 10 W Through Hole TO-126N
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-225AA, TO-126-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 140 @ 100mA, 5V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | TO-126N |
| Current - Collector (Ic) (Max) | 1.5 A |
| Voltage - Collector Emitter Breakdown (Max) | 160 V |
| Power - Max | 10 W |
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