TTA0002(Q)
TRANS PNP 160V 18A TO3PManufacturer: Toshiba Semiconductor and Storage
Categories: Single Bipolar Transistors
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Toshiba Semiconductor and Storage TTA0002-Q- is a PNP bipolar junction transistor (BJT) designed for demanding power applications. This component offers a high collector-emitter breakdown voltage of 160 V and a continuous collector current capability of 18 A, with a maximum power dissipation of 180 W. The transistor exhibits a minimum DC current gain (hFE) of 80 at 1 A and 5 V, and a transition frequency of 30 MHz. It features a low saturation voltage of 2 V at 900 mA collector current and 9 A. The TTA0002-Q- utilizes a TO-3P(L) through-hole package, suitable for robust thermal management. Industries such as industrial automation, power supplies, and audio amplification commonly leverage the performance characteristics of this device.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: 15 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-3PL |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 900mA, 9A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 1A, 5V |
| Frequency - Transition | 30MHz |
| Supplier Device Package | TO-3P(L) |
| Current - Collector (Ic) (Max) | 18 A |
| Voltage - Collector Emitter Breakdown (Max) | 160 V |
| Power - Max | 180 W |
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