TPC6503(TE85L,F,M)
TRANS NPN 30V 1.5A VS-6Manufacturer: Toshiba Semiconductor and Storage
Categories: Single Bipolar Transistors
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Toshiba Semiconductor and Storage TPC6503-TE85L-F-M is an NPN bipolar junction transistor from the U-MOSVII series. This device features a collector-emitter breakdown voltage of 30V and a maximum continuous collector current of 1.5A. The transistor offers a minimum DC current gain (hFE) of 400 at 150mA and 2V, with a Vce saturation of 120mV at 10mA and 500mA. Designed for surface mount applications, it is housed in a VS-6 (2.9x2.8) package, specifically a SOT-23-6 Thin or TSOT-23-6. The maximum power dissipation is 1.6W, and it operates at junction temperatures up to 150°C. The collector cutoff current (ICBO) is specified at a maximum of 100nA. This component is commonly found in power management and consumer electronics applications. It is supplied in Tape & Reel packaging.
Additional Information
Series: U-MOSVIIRoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 120mV @ 10mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 400 @ 150mA, 2V |
| Frequency - Transition | - |
| Supplier Device Package | VS-6 (2.9x2.8) |
| Current - Collector (Ic) (Max) | 1.5 A |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 1.6 W |
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