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2SD2695,T6F(J

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2SD2695,T6F(J

TRANS NPN 60V 2A TO92MOD

Manufacturer: Toshiba Semiconductor and Storage

Categories: Single Bipolar Transistors

Quality Control: Learn More

Toshiba Semiconductor and Storage's 2SD2695-T6F-J is an NPN bipolar junction transistor (BJT) designed for through-hole mounting. This component offers a collector-emitter breakdown voltage of 60 V and a continuous collector current capability of up to 2 A. It features a transition frequency of 100 MHz and a maximum power dissipation of 900 mW. The DC current gain (hFE) is a minimum of 2000 at 1A and 2V. The transistor is housed in a TO-92MOD package, also referred to as TO-226-3, TO-92-3 Long Body. The operating junction temperature range extends to 150°C. This device finds application in areas such as power switching and general-purpose amplification within industrial and consumer electronics.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-226-3, TO-92-3 Long Body
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.5V @ 1mA, 1A
Current - Collector Cutoff (Max)10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce2000 @ 1A, 2V
Frequency - Transition100MHz
Supplier Device PackageTO-92MOD
Current - Collector (Ic) (Max)2 A
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max900 mW

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