2SD2695,T6F(J
TRANS NPN 60V 2A TO92MODManufacturer: Toshiba Semiconductor and Storage
Categories: Single Bipolar Transistors
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Toshiba Semiconductor and Storage's 2SD2695-T6F-J is an NPN bipolar junction transistor (BJT) designed for through-hole mounting. This component offers a collector-emitter breakdown voltage of 60 V and a continuous collector current capability of up to 2 A. It features a transition frequency of 100 MHz and a maximum power dissipation of 900 mW. The DC current gain (hFE) is a minimum of 2000 at 1A and 2V. The transistor is housed in a TO-92MOD package, also referred to as TO-226-3, TO-92-3 Long Body. The operating junction temperature range extends to 150°C. This device finds application in areas such as power switching and general-purpose amplification within industrial and consumer electronics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 1mA, 1A |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 2000 @ 1A, 2V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | TO-92MOD |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 900 mW |