2SD2257(Q,M)
TRANS NPN 100V 3A TO220NISManufacturer: Toshiba Semiconductor and Storage
Categories: Single Bipolar Transistors
Quality Control: Learn More
Toshiba Semiconductor and Storage's 2SD2257-Q-M- is an NPN bipolar junction transistor (BJT) designed for robust power switching applications. This component offers a collector-emitter breakdown voltage of 100V and a continuous collector current capability of up to 3A, with a maximum power dissipation of 2W. It features a high DC current gain (hFE) of a minimum 2000 at 2A collector current and 2V Vce, ensuring efficient amplification and switching. The transistor exhibits a saturation voltage (Vce(sat)) of 1.5V at 1.5mA base current and 1.5A collector current. With a low collector cutoff current (ICBO) of 10µA, it maintains minimal leakage. The 2SD2257-Q-M- is housed in a TO-220NIS package, suitable for through-hole mounting, and operates reliably up to 150°C junction temperature. This device is commonly utilized in power supply circuits, motor control, and general-purpose amplification within industrial and consumer electronics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 1.5mA, 1.5A |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 2000 @ 2A, 2V |
| Frequency - Transition | - |
| Supplier Device Package | TO-220NIS |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 2 W |