2SD2257,Q(J
TRANS NPN 100V 3A TO220NISManufacturer: Toshiba Semiconductor and Storage
Categories: Single Bipolar Transistors
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Toshiba Semiconductor and Storage's 2SD2257-Q-J is an NPN bipolar junction transistor designed for robust performance in demanding applications. This component features a 100V collector-emitter breakdown voltage and a maximum collector current of 3A, with a minimal collector cutoff current of 10µA (ICBO). The device exhibits a high DC current gain (hFE) of at least 2000 at 2A collector current and 2V Vce. Power dissipation is rated at 2W, and it operates efficiently across a temperature range up to 150°C (TJ). The TO-220NIS package with through-hole mounting and a Vce(sat) of 1.5V at 1.5mA base current and 1.5A collector current ensures reliable thermal management and ease of integration. This transistor is well-suited for use in power supply circuits and general-purpose amplification across various industrial sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 1.5mA, 1.5A |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 2000 @ 2A, 2V |
| Frequency - Transition | - |
| Supplier Device Package | TO-220NIS |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 2 W |
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