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2SD2257,Q(J

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2SD2257,Q(J

TRANS NPN 100V 3A TO220NIS

Manufacturer: Toshiba Semiconductor and Storage

Categories: Single Bipolar Transistors

Quality Control: Learn More

Toshiba Semiconductor and Storage's 2SD2257-Q-J is an NPN bipolar junction transistor designed for robust performance in demanding applications. This component features a 100V collector-emitter breakdown voltage and a maximum collector current of 3A, with a minimal collector cutoff current of 10µA (ICBO). The device exhibits a high DC current gain (hFE) of at least 2000 at 2A collector current and 2V Vce. Power dissipation is rated at 2W, and it operates efficiently across a temperature range up to 150°C (TJ). The TO-220NIS package with through-hole mounting and a Vce(sat) of 1.5V at 1.5mA base current and 1.5A collector current ensures reliable thermal management and ease of integration. This transistor is well-suited for use in power supply circuits and general-purpose amplification across various industrial sectors.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: 14 week(s)Product Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.5V @ 1.5mA, 1.5A
Current - Collector Cutoff (Max)10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce2000 @ 2A, 2V
Frequency - Transition-
Supplier Device PackageTO-220NIS
Current - Collector (Ic) (Max)3 A
Voltage - Collector Emitter Breakdown (Max)100 V
Power - Max2 W

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