2SD2257,KEHINQ(J
TRANS NPN 100V 3A TO220NISManufacturer: Toshiba Semiconductor and Storage
Categories: Single Bipolar Transistors
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Toshiba Semiconductor and Storage NPN Bipolar Junction Transistor, part number 2SD2257-KEHINQ-J. This through-hole mounted device features a collector-emitter breakdown voltage of 100V and a maximum collector current of 3A. It offers a minimum DC current gain (hFE) of 2000 at 2A, 2V. The transistor is packaged in a TO-220NIS (TO-220-3 Full Pack) housing and can operate at temperatures up to 150°C. Applications include power switching and amplification in various industrial and consumer electronics. Maximum power dissipation is 2W. Collector cutoff current is a maximum of 10µA (ICBO).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 1.5mA, 1.5A |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 2000 @ 2A, 2V |
| Frequency - Transition | - |
| Supplier Device Package | TO-220NIS |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 2 W |
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