2SD2257(CANO,Q,M)
TRANS NPN 100V 3A TO220NISManufacturer: Toshiba Semiconductor and Storage
Categories: Single Bipolar Transistors
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Toshiba Semiconductor and Storage 2SD2257-CANO-Q-M- is an NPN bipolar junction transistor (BJT) designed for robust switching and amplification applications. This device features a maximum collector-emitter voltage (Vce) of 100V and a continuous collector current (Ic) capability of up to 3A. The transistor exhibits a low saturation voltage of 1.5V at 1.5mA/1.5A and a high DC current gain (hFE) of 2000 at 2A/2V, ensuring efficient operation. With a maximum power dissipation of 2W and an operating junction temperature of 150°C, the TO-220NIS packaged component is suitable for use in industrial automation, power supplies, and consumer electronics. The through-hole mounting type facilitates integration into various PCB designs.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 1.5mA, 1.5A |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 2000 @ 2A, 2V |
| Frequency - Transition | - |
| Supplier Device Package | TO-220NIS |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 2 W |
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