2SD2257(CANO,A,Q)
TRANS NPN 100V 3A TO220NISManufacturer: Toshiba Semiconductor and Storage
Categories: Single Bipolar Transistors
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Toshiba Semiconductor and Storage NPN Bipolar Junction Transistor, part number 2SD2257-CANO-A-Q-. This through-hole component features a maximum collector current (Ic) of 3 A and a collector-emitter breakdown voltage (Vceo) of 100 V. It offers a minimum DC current gain (hFE) of 2000 at 2 A and 2 V. The device dissipates a maximum power of 2 W and operates at temperatures up to 150°C (TJ). Encased in a TO-220NIS package, this transistor is suitable for applications in industrial automation and power management. The collector cutoff current (ICBO) is a maximum of 10 µA.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 1.5mA, 1.5A |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 2000 @ 2A, 2V |
| Frequency - Transition | - |
| Supplier Device Package | TO-220NIS |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 2 W |
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