2SD2206,T6F(J
TRANS NPN 100V 2A TO92MODManufacturer: Toshiba Semiconductor and Storage
Categories: Single Bipolar Transistors
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Toshiba Semiconductor and Storage NPN Bipolar Junction Transistor, part number 2SD2206-T6F-J. This through-hole component offers a collector-emitter breakdown voltage of 100V and a maximum continuous collector current of 2A. Featuring a high DC current gain (hFE) of 2000 at 1A and 2V, with a transition frequency of 100MHz. The device has a maximum power dissipation of 900mW and a collector cutoff current (ICBO) of 10µA. The saturation voltage (Vce Sat) is a maximum of 1.5V at 1mA base current and 1A collector current. Packaged in a TO-92MOD (TO-226-3, TO-92-3 Long Body) and supplied in bulk, this transistor is suitable for applications in consumer electronics and industrial control systems. Operating junction temperature is up to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 1mA, 1A |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 2000 @ 1A, 2V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | TO-92MOD |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 900 mW |
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