2SD2206(T6CANO,F,M
TRANS NPN 100V 2A TO92MODManufacturer: Toshiba Semiconductor and Storage
Categories: Single Bipolar Transistors
Quality Control: Learn More
Toshiba Semiconductor and Storage NPN Bipolar Junction Transistor, part number 2SD2206-T6CANO-F-M. This component features a 100V collector-emitter breakdown voltage and a maximum collector current of 2A. The minimum DC current gain (hFE) is specified as 2000 at 1A collector current and 2V collector-emitter voltage. With a transition frequency of 100MHz and a maximum power dissipation of 900mW, this transistor is suitable for applications requiring moderate power handling and switching speeds. The TO-92MOD package, also known as TO-226-3 or TO-92-3 Long Body, is designed for through-hole mounting. The operating temperature range extends to 150°C (TJ). This device is utilized in various industrial and consumer electronics applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 1mA, 1A |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 2000 @ 1A, 2V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | TO-92MOD |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 900 mW |
Request a Quote
Clients Also Buy
2SD1407A-Y(F)
TRANS NPN 100V 5A TO220NIS
TTC012(Q)
TRANS NPN 375V 2A PW-MOLD2
2SA1162S-Y, LF(D
TRANS PNP 50V 0.15A SMINI
