2SD2129,LS4ALPSQ(M
TRANS NPN 100V 3A TO220NISManufacturer: Toshiba Semiconductor and Storage
Categories: Single Bipolar Transistors
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Toshiba Semiconductor and Storage 2SD2129-LS4ALPSQ-M is an NPN bipolar junction transistor (BJT) designed for power switching applications. This device features a 100 V collector-emitter breakdown voltage (Vceo) and a continuous collector current (Ic) capability of up to 3 A, with a maximum power dissipation of 2 W. The DC current gain (hFE) is specified at a minimum of 2000 at 1.5 A collector current and 3 V collector-emitter voltage. Saturation voltage (Vce(sat)) is a maximum of 2V at 12 mA base current and 3 A collector current. The transistor is housed in a TO-220NIS package, suitable for through-hole mounting. This component is commonly utilized in power management circuits, voltage regulators, and general-purpose amplification within industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 12mA, 3A |
| Current - Collector Cutoff (Max) | 100µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 2000 @ 1.5A, 3V |
| Frequency - Transition | - |
| Supplier Device Package | TO-220NIS |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 2 W |
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