2SD2129,ALPSQ(M
TRANS NPN 100V 3A TO220NISManufacturer: Toshiba Semiconductor and Storage
Categories: Single Bipolar Transistors
Quality Control: Learn More
Toshiba Semiconductor and Storage introduces the 2SD2129-ALPSQ-M, an NPN bipolar junction transistor (BJT) designed for robust performance. This component offers a collector-emitter breakdown voltage of 100 V and a continuous collector current capability of up to 3 A. It features a typical saturation voltage of 2 V at 12 mA base current and 3 A collector current, with a minimum DC current gain (hFE) of 2000 at 1.5 A and 3 V. The transistor is housed in a TO-220NIS package, a TO-220-3 Full Pack configuration, suitable for through-hole mounting. With a maximum power dissipation of 2 W and an operating junction temperature of 150°C, the 2SD2129-ALPSQ-M is well-suited for applications in power switching and general-purpose amplification across various industrial and consumer electronics sectors. This device is supplied in bulk packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 12mA, 3A |
| Current - Collector Cutoff (Max) | 100µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 2000 @ 1.5A, 3V |
| Frequency - Transition | - |
| Supplier Device Package | TO-220NIS |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 2 W |
Request a Quote
Clients Also Buy
2SA1162S-Y, LF(D
TRANS PNP 50V 0.15A SMINI
2SA1972,F(J
TRANS PNP 400V 0.5A TO92MOD
TTC009,F(J
TRANS NPN 80V 3A TO220NIS
