2SD1407A-Y(F)
TRANS NPN 100V 5A TO220NISManufacturer: Toshiba Semiconductor and Storage
Categories: Single Bipolar Transistors
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Toshiba Semiconductor and Storage NPN Bipolar Junction Transistor, Part Number 2SD1407A-Y-F-. This device features a 100V collector-emitter breakdown voltage and a continuous collector current of 5A. With a maximum power dissipation of 30W and a transition frequency of 12MHz, it is suitable for power switching and amplification applications. The minimum DC current gain (hFE) is 120 at 1A collector current and 5V collector-emitter voltage. Saturation voltage (Vce Sat) is a maximum of 2V at 400mA base current and 4A collector current. The transistor is housed in a TO-220NIS package for through-hole mounting and operates at junction temperatures up to 150°C. This component is commonly utilized in power supply circuits, motor control, and general-purpose amplification across various industrial sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 400mA, 4A |
| Current - Collector Cutoff (Max) | 100µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1A, 5V |
| Frequency - Transition | 12MHz |
| Supplier Device Package | TO-220NIS |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 30 W |
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