2SC6139,T2F(M
TRANS NPN 160V 1.5A MSTMManufacturer: Toshiba Semiconductor and Storage
Categories: Single Bipolar Transistors
Quality Control: Learn More
Toshiba Semiconductor and Storage NPN Bipolar Junction Transistor (BJT), part number 2SC6139-T2F-M. This device offers a collector-emitter breakdown voltage of 160 V and a continuous collector current capability of 1.5 A. It features a transition frequency of 100 MHz and a maximum power dissipation of 1 W. The transistor exhibits a minimum DC current gain (hFE) of 140 at 100 mA and 5 V. Collector saturation voltage is specified at a maximum of 500 mV for a base current of 50 mA and collector current of 500 mA. The collector cutoff current (ICBO) is a maximum of 100 nA. This through-hole component is supplied in SC-71 packaging (MSTM) and is suitable for applications in power supply circuits, lighting controls, and general-purpose amplification. Operating junction temperature is rated up to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SC-71 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 140 @ 100mA, 5V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | MSTM |
| Current - Collector (Ic) (Max) | 1.5 A |
| Voltage - Collector Emitter Breakdown (Max) | 160 V |
| Power - Max | 1 W |
Request a Quote
Clients Also Buy
2SA1162S-Y, LF(D
TRANS PNP 50V 0.15A SMINI
2SA1972,F(J
TRANS PNP 400V 0.5A TO92MOD
TTC009,F(J
TRANS NPN 80V 3A TO220NIS
