2SC6042,T2HOSH1Q(J
TRANS NPN 375V 1A MSTMManufacturer: Toshiba Semiconductor and Storage
Categories: Single Bipolar Transistors
Quality Control: Learn More
Toshiba Semiconductor and Storage NPN Bipolar Junction Transistor, part number 2SC6042-T2HOSH1Q-J. This device offers a 375V collector-emitter breakdown voltage and a maximum collector current of 1A. It features a minimum DC current gain (hFE) of 100 at 100mA and 5V. The transistor type is NPN, specified for through-hole mounting. With a maximum power dissipation of 1W and an operating temperature up to 150°C, this component is suitable for applications in industrial and power control systems. The collector cutoff current (ICBO) is a maximum of 100µA. The saturation voltage (Vce Sat) is a maximum of 1V at 100mA base current and 800mA collector current. The supplier device package is MSTM.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SC-71 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 100mA, 800mA |
| Current - Collector Cutoff (Max) | 100µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 100mA, 5V |
| Frequency - Transition | - |
| Supplier Device Package | MSTM |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 375 V |
| Power - Max | 1 W |
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