2SC6040(TPF2,Q,M)
TRANS NPN 800V 1A MSTMManufacturer: Toshiba Semiconductor and Storage
Categories: Single Bipolar Transistors
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Toshiba Semiconductor and Storage NPN Bipolar Junction Transistor, part number 2SC6040-TPF2-Q-M-. This through-hole device offers a maximum collector-emitter breakdown voltage of 800V and a continuous collector current rating of 1A. It features a maximum power dissipation of 1W and a collector cutoff current (ICBO) of 100µA. The minimum DC current gain (hFE) is 60 at 100mA and 5V. The saturation voltage (Vce(sat)) is a maximum of 1V at 100mA base current and 800mA collector current. The transistor is supplied in MSTM packaging and is suitable for applications in power supplies and lighting control.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Bulk |
| Package / Case | SC-71 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 100mA, 800mA |
| Current - Collector Cutoff (Max) | 100µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 100mA, 5V |
| Frequency - Transition | - |
| Supplier Device Package | MSTM |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 800 V |
| Power - Max | 1 W |
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