2SC6010(T2MITUM,FM
TRANS NPN 600V 1A MSTMManufacturer: Toshiba Semiconductor and Storage
Categories: Single Bipolar Transistors
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Toshiba Semiconductor and Storage NPN Bipolar Junction Transistor, part number 2SC6010-T2MITUM-FM. This device offers a maximum collector-emitter breakdown voltage of 600 V and a continuous collector current of 1 A, with a maximum power dissipation of 1 W. It features a minimum DC current gain (hFE) of 100 at 100 mA and 5 V. The saturation voltage (Vce Sat) is a maximum of 1 V at 75 mA base current and 600 mA collector current. Collector cutoff current (ICBO) is specified at a maximum of 100 µA. With a junction temperature rating of 150°C, this transistor is suited for applications in industrial and power supply control systems. The component is supplied in a Through Hole package (SC-71) with MSTM designation for the supplier device package and is available in Bulk packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SC-71 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 75mA, 600mA |
| Current - Collector Cutoff (Max) | 100µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 100mA, 5V |
| Frequency - Transition | - |
| Supplier Device Package | MSTM |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Power - Max | 1 W |
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