2SC5354-1(F)
TRANS NPN 800V 5A TO-3PNManufacturer: Toshiba Semiconductor and Storage
Categories: Single Bipolar Transistors
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Toshiba Semiconductor and Storage NPN bipolar transistor, part number 2SC5354-1-F-. This component offers a 800V collector-emitter breakdown voltage and a maximum collector current of 5A, with a power dissipation of 100W. It features a minimum DC current gain (hFE) of 10 at 1mA and 5V. The saturation voltage (Vce Sat) is a maximum of 1V at 400mA and 2A. This device is offered in a TO-3P(N) through-hole package. It is suitable for applications in power supply and high-voltage switching circuits.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: 52 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tray |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 400mA, 2A |
| Current - Collector Cutoff (Max) | 100µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 1mA, 5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-3P(N) |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 800 V |
| Power - Max | 100 W |
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