2SC4935-Y,Q(J
TRANS NPN 50V 3A TO220NISManufacturer: Toshiba Semiconductor and Storage
Categories: Single Bipolar Transistors
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Toshiba Semiconductor and Storage NPN Bipolar Junction Transistor (BJT), part number 2SC4935-Y-Q-J. This through-hole component features a 50V collector-emitter breakdown voltage and a maximum collector current of 3A. With a minimum DC current gain (hFE) of 70 at 500mA and 2V, and a transition frequency of 80MHz, it is suitable for applications requiring moderate switching speeds and current handling. The device dissipates a maximum power of 2W and operates within a temperature range of 150°C. It is supplied in a TO-220NIS package, commonly utilized in consumer electronics and industrial control systems. The collector cutoff current is specified at 1µA (ICBO), and the Vce saturation voltage is 600mV at 200mA and 2A.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 200mA, 2A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 500mA, 2V |
| Frequency - Transition | 80MHz |
| Supplier Device Package | TO-220NIS |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 2 W |
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