2SC4793,NSEIKIF(J
TRANS NPN 230V 1A TO220NISManufacturer: Toshiba Semiconductor and Storage
Categories: Single Bipolar Transistors
Quality Control: Learn More
Toshiba Semiconductor and Storage NPN Bipolar Junction Transistor, part number 2SC4793-NSEIKIF-J. This through-hole device features a 230V collector-emitter breakdown voltage and a maximum collector current of 1A. It offers a minimum DC current gain (hFE) of 100 at 100mA collector current and 5V collector-emitter voltage, with a transition frequency of 100MHz. The transistor has a maximum power dissipation of 2W and a saturation voltage of 1.5V at 50mA base current and 500mA collector current. The TO-220NIS package is supplied in bulk packaging. This component is suitable for applications in industrial equipment and power supply circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 100mA, 5V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | TO-220NIS |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 230 V |
| Power - Max | 2 W |
Request a Quote
Clients Also Buy
2SD1407A-Y(F)
TRANS NPN 100V 5A TO220NIS
TTC012(Q)
TRANS NPN 375V 2A PW-MOLD2
2SA1162S-Y, LF(D
TRANS PNP 50V 0.15A SMINI
