2SC4793,HFEF(M
TRANS NPN 230V 1A TO220NISManufacturer: Toshiba Semiconductor and Storage
Categories: Single Bipolar Transistors
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Toshiba Semiconductor and Storage 2SC4793-HFEF-M is an NPN bipolar junction transistor designed for high voltage applications. This component features a maximum collector-emitter breakdown voltage of 230V and a continuous collector current capability of 1A. With a transition frequency of 100MHz and a maximum power dissipation of 2W, it is suitable for power switching and amplification circuits. The DC current gain (hFE) is a minimum of 100 at 100mA collector current and 5V collector-emitter voltage. The transistor is housed in a TO-220NIS package, facilitating through-hole mounting. Applications include power supplies, lighting controls, and general-purpose amplification across various industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 100mA, 5V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | TO-220NIS |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 230 V |
| Power - Max | 2 W |
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