2SC4793,F(J
TRANS NPN 230V 1A TO220NISManufacturer: Toshiba Semiconductor and Storage
Categories: Single Bipolar Transistors
Quality Control: Learn More
Toshiba Semiconductor and Storage NPN Bipolar Transistor, part number 2SC4793-F-J. This through-hole device features a collector-emitter breakdown voltage of 230V and a continuous collector current capability of 1A. With a maximum power dissipation of 2W and a transition frequency of 100MHz, it is suitable for applications requiring moderate power handling and switching speeds. The transistor exhibits a minimum DC current gain (hFE) of 100 at 100mA and 5V. The saturation voltage (Vce(sat)) is a maximum of 1.5V at 50mA collector current and 500mA base current. The device operates at junction temperatures up to 150°C and is supplied in a TO-220NIS package. This component is utilized in various industrial and consumer electronics applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 100mA, 5V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | TO-220NIS |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 230 V |
| Power - Max | 2 W |
Request a Quote
Clients Also Buy
2SA1162S-Y, LF(D
TRANS PNP 50V 0.15A SMINI
2SA1972,F(J
TRANS PNP 400V 0.5A TO92MOD
TTC009,F(J
TRANS NPN 80V 3A TO220NIS
