2SC4738-GR,LF
TRANS NPN 50V 0.15A SSMManufacturer: Toshiba Semiconductor and Storage
Categories: Single Bipolar Transistors
Quality Control: Learn More
Toshiba Semiconductor and Storage NPN Bipolar Junction Transistor (BJT), part number 2SC4738-GR-LF. This device features a 50V collector-emitter breakdown voltage and a continuous collector current of 150mA. With a transition frequency of 80MHz and a maximum power dissipation of 100mW, it is suitable for general-purpose amplification and switching applications. The minimum DC current gain (hFE) is specified as 200 at 2mA collector current and 6V collector-emitter voltage. It exhibits a collector cut-off current (ICBO) of 100nA and a Vce saturation of 250mV at 10mA base current and 100mA collector current. The 2SC4738-GR-LF is supplied in an SSM package (SC-75, SOT-416) for surface mounting and is delivered on tape and reel. This component finds application in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 125°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 6V |
| Frequency - Transition | 80MHz |
| Supplier Device Package | SSM |
| Current - Collector (Ic) (Max) | 150 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 100 mW |