2SC4682,T6CSF(J
TRANS NPN 15V 3A TO92MODManufacturer: Toshiba Semiconductor and Storage
Categories: Single Bipolar Transistors
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Toshiba Semiconductor and Storage NPN Bipolar Junction Transistor (BJT), part number 2SC4682-T6CSF-J. This through-hole device features a TO-92MOD package and is rated for a collector current of 3 A and a collector-emitter breakdown voltage of 15 V. With a transition frequency of 150 MHz and a maximum power dissipation of 900 mW, it offers a minimum DC current gain (hFE) of 800 at 500 mA and 1 V. The saturation voltage (Vce) is a maximum of 500 mV at 30 mA and 3 A. This component is suitable for applications in industrial and consumer electronics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 30mA, 3A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 800 @ 500mA, 1V |
| Frequency - Transition | 150MHz |
| Supplier Device Package | TO-92MOD |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 15 V |
| Power - Max | 900 mW |
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