2SC4604,T6F(M
TRANS NPN 50V 3A TO92MODManufacturer: Toshiba Semiconductor and Storage
Categories: Single Bipolar Transistors
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Toshiba Semiconductor and Storage's 2SC4604-T6F-M is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a collector-emitter breakdown voltage of 50V and a maximum continuous collector current of 3A, with a saturation voltage of 500mV at 75mA base current and 1.5A collector current. The device exhibits a minimum DC current gain (hFE) of 120 at 100mA collector current and 2V collector-emitter voltage, and a transition frequency of 100MHz. Engineered for through-hole mounting within a TO-92MOD package, it offers a maximum power dissipation of 900mW and an operating junction temperature of 150°C. The 2SC4604-T6F-M is suitable for use in industrial and consumer electronics power management circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 75mA, 1.5A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 100mA, 2V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | TO-92MOD |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 900 mW |
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