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2SC4604,T6F(J

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2SC4604,T6F(J

TRANS NPN 50V 3A TO92MOD

Manufacturer: Toshiba Semiconductor and Storage

Categories: Single Bipolar Transistors

Quality Control: Learn More

Toshiba Semiconductor and Storage NPN Bipolar Junction Transistor, part number 2SC4604-T6F-J. This TO-92MOD packaged device offers a collector-emitter breakdown voltage (Vce) of 50 V and a continuous collector current (Ic) capability of 3 A. Featuring a transition frequency (fT) of 100 MHz and a maximum power dissipation of 900 mW, it exhibits a minimum DC current gain (hFE) of 120 at 100 mA and 2 V. The saturation voltage (Vce(sat)) is a maximum of 500 mV at 75 mA and 1.5 A, with a collector cutoff current (Icbo) of 100 nA. Designed for through-hole mounting, this component operates within a junction temperature range of 150°C. It finds application in various industrial and consumer electronics for amplification and switching functions.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-226-3, TO-92-3 Long Body
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic500mV @ 75mA, 1.5A
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 100mA, 2V
Frequency - Transition100MHz
Supplier Device PackageTO-92MOD
Current - Collector (Ic) (Max)3 A
Voltage - Collector Emitter Breakdown (Max)50 V
Power - Max900 mW

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