2SC4604,T6F(J
TRANS NPN 50V 3A TO92MODManufacturer: Toshiba Semiconductor and Storage
Categories: Single Bipolar Transistors
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Toshiba Semiconductor and Storage NPN Bipolar Junction Transistor, part number 2SC4604-T6F-J. This TO-92MOD packaged device offers a collector-emitter breakdown voltage (Vce) of 50 V and a continuous collector current (Ic) capability of 3 A. Featuring a transition frequency (fT) of 100 MHz and a maximum power dissipation of 900 mW, it exhibits a minimum DC current gain (hFE) of 120 at 100 mA and 2 V. The saturation voltage (Vce(sat)) is a maximum of 500 mV at 75 mA and 1.5 A, with a collector cutoff current (Icbo) of 100 nA. Designed for through-hole mounting, this component operates within a junction temperature range of 150°C. It finds application in various industrial and consumer electronics for amplification and switching functions.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 75mA, 1.5A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 100mA, 2V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | TO-92MOD |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 900 mW |