2SC4604,F(J
TRANS NPN 50V 3A TO92MODManufacturer: Toshiba Semiconductor and Storage
Categories: Single Bipolar Transistors
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Toshiba Semiconductor and Storage NPN Bipolar Junction Transistor, part number 2SC4604-F-J. This through-hole component offers a 50V collector-emitter breakdown voltage and a maximum collector current of 3A. It features a transition frequency of 100MHz and a power dissipation of 900mW. The DC current gain (hFE) is a minimum of 120 at 100mA and 2V. The saturation voltage (Vce Sat) is 500mV maximum at 75mA and 1.5A. Collector cutoff current is 100nA (ICBO). Operating temperature range is up to 150°C. The package is TO-92MOD, also identified as TO-226-3, TO-92-3 Long Body. This device is commonly found in industrial and consumer electronics applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 75mA, 1.5A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 100mA, 2V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | TO-92MOD |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 900 mW |