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2SC4213-A(TE85L,F)

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2SC4213-A(TE85L,F)

TRANS NPN 20V 0.3A SC70

Manufacturer: Toshiba Semiconductor and Storage

Categories: Single Bipolar Transistors

Quality Control: Learn More

Toshiba Semiconductor and Storage NPN Bipolar Junction Transistor (BJT), part number 2SC4213-A-TE85L-F-. This device features a 20V collector-emitter breakdown voltage and a maximum collector current of 300mA. It is specified with a transition frequency of 30MHz and a maximum power dissipation of 100mW at 125°C junction temperature. The DC current gain (hFE) is a minimum of 200 at 4mA collector current and 2V Vce. The saturation voltage (Vce(sat)) is a maximum of 100mV at 3mA base current and 30A collector current. The component is housed in an SC-70 (SOT-323) surface-mount package and supplied on tape and reel. Applications include general-purpose amplification and switching in consumer electronics and industrial control systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-70, SOT-323
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature125°C (TJ)
Vce Saturation (Max) @ Ib, Ic100mV @ 3mA, 30A
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 4mA, 2V
Frequency - Transition30MHz
Supplier Device PackageSC-70
Current - Collector (Ic) (Max)300 mA
Voltage - Collector Emitter Breakdown (Max)20 V
Power - Max100 mW

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