2SC4213-A(TE85L,F)
TRANS NPN 20V 0.3A SC70Manufacturer: Toshiba Semiconductor and Storage
Categories: Single Bipolar Transistors
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Toshiba Semiconductor and Storage NPN Bipolar Junction Transistor (BJT), part number 2SC4213-A-TE85L-F-. This device features a 20V collector-emitter breakdown voltage and a maximum collector current of 300mA. It is specified with a transition frequency of 30MHz and a maximum power dissipation of 100mW at 125°C junction temperature. The DC current gain (hFE) is a minimum of 200 at 4mA collector current and 2V Vce. The saturation voltage (Vce(sat)) is a maximum of 100mV at 3mA base current and 30A collector current. The component is housed in an SC-70 (SOT-323) surface-mount package and supplied on tape and reel. Applications include general-purpose amplification and switching in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 125°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 100mV @ 3mA, 30A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 4mA, 2V |
| Frequency - Transition | 30MHz |
| Supplier Device Package | SC-70 |
| Current - Collector (Ic) (Max) | 300 mA |
| Voltage - Collector Emitter Breakdown (Max) | 20 V |
| Power - Max | 100 mW |
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