2SC4116-O(TE85L,F)
TRANS NPN 50V 0.15A SC70Manufacturer: Toshiba Semiconductor and Storage
Categories: Single Bipolar Transistors
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Toshiba Semiconductor and Storage NPN Bipolar Junction Transistor, part number 2SC4116-O-TE85L-F-. This device features a collector-emitter breakdown voltage of 50V and a maximum collector current of 150mA. With a transition frequency of 80MHz and a power dissipation of 100mW, it is suitable for applications requiring moderate switching speeds and power handling. The minimum DC current gain (hFE) is 70 at 2mA collector current and 6V collector-emitter voltage. Collector cutoff current is a maximum of 100nA. The saturation voltage (Vce) is 250mV maximum at 10mA base current and 100mA collector current. This component is supplied in an SC-70 (SOT-323) surface mount package and is provided on tape and reel. It is commonly utilized in general-purpose amplification and switching circuits across a range of electronic equipment. The operating temperature range extends to 125°C.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: 24 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 125°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 2mA, 6V |
| Frequency - Transition | 80MHz |
| Supplier Device Package | SC-70 |
| Current - Collector (Ic) (Max) | 150 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 100 mW |
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