2SC4116-GR,LXHF
TRANS NPN 50V 0.15A SC70Manufacturer: Toshiba Semiconductor and Storage
Categories: Single Bipolar Transistors
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Toshiba Semiconductor and Storage NPN Bipolar Junction Transistor, part number 2SC4116-GR-LXHF. This device features a 50V collector-emitter breakdown voltage and a maximum collector current of 150mA. With a transition frequency of 80MHz, it is suitable for general-purpose amplification and switching applications. The transistor exhibits a minimum DC current gain (hFE) of 200 at 2mA and 6V, with a saturation voltage of 250mV at 10mA collector current and 10mA base current. It is supplied in an SC-70 (SOT-323) surface mount package, available on tape and reel. The maximum power dissipation is 100mW, and it operates within a junction temperature range of -55°C to 125°C. This component is utilized in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 125°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 6V |
| Frequency - Transition | 80MHz |
| Supplier Device Package | SC-70 |
| Current - Collector (Ic) (Max) | 150 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 100 mW |
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