2SC3328-Y,T6CKF(J
TRANS NPN 80V 2A TO92MODManufacturer: Toshiba Semiconductor and Storage
Categories: Single Bipolar Transistors
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Toshiba Semiconductor and Storage NPN Bipolar Junction Transistor, part number 2SC3328-Y-T6CKF-J. This device features a 80V collector-emitter breakdown voltage and a maximum collector current of 2A. With a transition frequency of 100MHz and a power dissipation of 900mW, it is suitable for applications requiring moderate switching speeds and power handling. The minimum DC current gain (hFE) is 70 at 500mA and 2V. Key specifications include a collector cutoff current (ICBO) of 1µA and a Vce saturation of 500mV at 50mA and 1A. This component is housed in a TO-92MOD package, designed for through-hole mounting. Its operating temperature range extends to 150°C. This transistor finds application in various industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 1A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 500mA, 2V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | TO-92MOD |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 900 mW |
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