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2SC3328-Y,HOF(M

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2SC3328-Y,HOF(M

TRANS NPN 80V 2A TO92MOD

Manufacturer: Toshiba Semiconductor and Storage

Categories: Single Bipolar Transistors

Quality Control: Learn More

Toshiba Semiconductor and Storage NPN Bipolar Junction Transistor, part number 2SC3328-Y-HOF-M. This transistor offers an 80V collector-emitter breakdown voltage and a maximum collector current of 2A. It features a transition frequency of 100MHz and a power dissipation of 900mW. The device is housed in a TO-92MOD package suitable for through-hole mounting. Key parameters include a minimum DC current gain (hFE) of 70 at 500mA collector current and 2V collector-emitter voltage, and a saturation voltage (Vce(sat)) of 500mV at 50mA base current and 1A collector current. Typical applications include power supply circuits and general-purpose amplification.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-226-3, TO-92-3 Long Body
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 1A
Current - Collector Cutoff (Max)1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 500mA, 2V
Frequency - Transition100MHz
Supplier Device PackageTO-92MOD
Current - Collector (Ic) (Max)2 A
Voltage - Collector Emitter Breakdown (Max)80 V
Power - Max900 mW

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