2SC3324GRTE85LF
TRANS NPN 120V 0.1A TO236Manufacturer: Toshiba Semiconductor and Storage
Categories: Single Bipolar Transistors
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Toshiba Semiconductor and Storage NPN Bipolar Junction Transistor, part number 2SC3324GRTE85LF. This device offers a 120V collector-emitter breakdown voltage and a continuous collector current of 100mA. The transistor features a transition frequency of 100MHz and a maximum power dissipation of 150mW. It is supplied in a TO-236 (SC-59, SOT-23-3) surface mount package, delivered on tape and reel. Key electrical characteristics include a minimum DC current gain (hFE) of 200 at 2mA and 6V, with a saturation voltage (Vce(sat)) of 300mV at 1mA and 10mA. The collector cutoff current (ICBO) is rated at 100nA. Operating temperature range extends to 125°C. This component finds application in various electronic circuits within the consumer electronics and industrial automation sectors.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 125°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 6V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | TO-236 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 120 V |
| Power - Max | 150 mW |
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