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2SC3324-BL(TE85L,F

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2SC3324-BL(TE85L,F

TRANS NPN 120V 0.1A TO236

Manufacturer: Toshiba Semiconductor and Storage

Categories: Single Bipolar Transistors

Quality Control: Learn More

Toshiba Semiconductor and Storage NPN Bipolar Junction Transistor, part number 2SC3324-BL-TE85L-F. This device features a collector-emitter breakdown voltage of 120V and a continuous collector current of 100mA. The transistor exhibits a transition frequency of 100MHz and a maximum power dissipation of 150mW. It is supplied in a TO-236 (SC-59) surface mount package, delivered on tape and reel. Key parameters include a minimum DC current gain (hFE) of 350 at 2mA, 6V and a collector-emitter saturation voltage (Vce(sat)) of 300mV at 1mA, 10mA. This component is commonly utilized in general-purpose switching and amplification applications across industrial and consumer electronics sectors.

Additional Information

Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature125°C (TJ)
Vce Saturation (Max) @ Ib, Ic300mV @ 1mA, 10mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce350 @ 2mA, 6V
Frequency - Transition100MHz
Supplier Device PackageTO-236
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)120 V
Power - Max150 mW

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