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2SC2705-O(TE6,F,M)

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2SC2705-O(TE6,F,M)

TRANS NPN 150V 0.05A TO92MOD

Manufacturer: Toshiba Semiconductor and Storage

Categories: Single Bipolar Transistors

Quality Control: Learn More

The Toshiba Semiconductor and Storage 2SC2705-O-TE6-F-M- is an NPN bipolar junction transistor (BJT) designed for through-hole mounting in a TO-92MOD package. This device offers a maximum collector-emitter breakdown voltage of 150V and a continuous collector current capability of 50mA. Key electrical characteristics include a minimum DC current gain (hFE) of 80 at 10mA collector current and 5V collector-emitter voltage, and a transition frequency of 200MHz. The maximum power dissipation is rated at 800mW, with an operating junction temperature up to 150°C. It is supplied in Tape & Box (TB) packaging. This component is commonly utilized in industrial, consumer electronics, and communication applications requiring precise switching and amplification.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)
Technical Details:
PackagingTape & Box (TB)
Package / CaseTO-226-3, TO-92-3 Long Body
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1V @ 1mA, 10mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 10mA, 5V
Frequency - Transition200MHz
Supplier Device PackageTO-92MOD
Current - Collector (Ic) (Max)50 mA
Voltage - Collector Emitter Breakdown (Max)150 V
Power - Max800 mW

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