2SC2705-O(TE6,F,M)
TRANS NPN 150V 0.05A TO92MODManufacturer: Toshiba Semiconductor and Storage
Categories: Single Bipolar Transistors
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The Toshiba Semiconductor and Storage 2SC2705-O-TE6-F-M- is an NPN bipolar junction transistor (BJT) designed for through-hole mounting in a TO-92MOD package. This device offers a maximum collector-emitter breakdown voltage of 150V and a continuous collector current capability of 50mA. Key electrical characteristics include a minimum DC current gain (hFE) of 80 at 10mA collector current and 5V collector-emitter voltage, and a transition frequency of 200MHz. The maximum power dissipation is rated at 800mW, with an operating junction temperature up to 150°C. It is supplied in Tape & Box (TB) packaging. This component is commonly utilized in industrial, consumer electronics, and communication applications requiring precise switching and amplification.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
| Frequency - Transition | 200MHz |
| Supplier Device Package | TO-92MOD |
| Current - Collector (Ic) (Max) | 50 mA |
| Voltage - Collector Emitter Breakdown (Max) | 150 V |
| Power - Max | 800 mW |
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