2SC2482(T6TOJS,F,M
TRANS NPN 300V 0.1A TO92MODManufacturer: Toshiba Semiconductor and Storage
Categories: Single Bipolar Transistors
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Toshiba Semiconductor and Storage NPN Bipolar Junction Transistor (BJT), part number 2SC2482-T6TOJS-F-M. This through-hole component features a 300V collector-emitter breakdown voltage and a maximum collector current of 100mA. With a transition frequency of 50MHz and a power dissipation of 900mW, it offers a minimum DC current gain (hFE) of 30 at 20mA and 10V. The saturation voltage (Vce(sat)) is a maximum of 1V at 1mA base current and 10mA collector current, with a collector cutoff current (ICBO) of 1µA. The operating junction temperature range is up to 150°C. The component is supplied in a TO-92MOD package, also referred to as TO-226-3, TO-92-3 Long Body, and is provided in bulk packaging. This transistor is commonly utilized in power supply regulation, audio amplification, and general-purpose switching applications across various industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 20mA, 10V |
| Frequency - Transition | 50MHz |
| Supplier Device Package | TO-92MOD |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 300 V |
| Power - Max | 900 mW |
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