2SC2482(FJTN,F,M)
TRANS NPN 300V 0.1A TO92MODManufacturer: Toshiba Semiconductor and Storage
Categories: Single Bipolar Transistors
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Toshiba Semiconductor and Storage NPN Bipolar Junction Transistor, part number 2SC2482-FJTN-F-M-. This through-hole device features a 300 V collector-emitter breakdown voltage and a maximum collector current of 100 mA. With a transition frequency of 50 MHz and a maximum power dissipation of 900 mW, it is suitable for applications requiring low-power switching and amplification. Key parameters include a minimum DC current gain (hFE) of 30 at 20 mA and 10 V, and a collector cutoff current (ICBO) of 1 µA. The saturation voltage (Vce) is 1 V maximum at 1 mA base current and 10 mA collector current. The transistor is housed in a TO-92MOD package. This component finds application in general-purpose amplification and switching circuits across various electronic systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 20mA, 10V |
| Frequency - Transition | 50MHz |
| Supplier Device Package | TO-92MOD |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 300 V |
| Power - Max | 900 mW |
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