2SA965-Y,T6F(J
TRANS PNP 120V 0.8A TO92MODManufacturer: Toshiba Semiconductor and Storage
Categories: Single Bipolar Transistors
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Toshiba Semiconductor and Storage presents the 2SA965-Y-T6F-J, a PNP bipolar junction transistor. This component features a collector-emitter breakdown voltage of 120V and a continuous collector current capability of 800mA. With a transition frequency of 120MHz, it is suitable for applications requiring moderate speed switching and amplification. The device dissipates a maximum power of 900mW and is housed in a TO-92MOD package, designed for through-hole mounting. Key electrical characteristics include a minimum DC current gain (hFE) of 80 at 100mA and 5V, and a collector cutoff current of 100nA (ICBO). The saturation voltage (Vce Sat) is a maximum of 1V at 50mA base current and 500mA collector current. This transistor finds utility in various electronic circuits across industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 100mA, 5V |
| Frequency - Transition | 120MHz |
| Supplier Device Package | TO-92MOD |
| Current - Collector (Ic) (Max) | 800 mA |
| Voltage - Collector Emitter Breakdown (Max) | 120 V |
| Power - Max | 900 mW |
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