2SA965-Y(F,M)
TRANS PNP 120V 0.8A TO92MODManufacturer: Toshiba Semiconductor and Storage
Categories: Single Bipolar Transistors
Quality Control: Learn More
Toshiba Semiconductor and Storage PNP Bipolar Junction Transistor, part number 2SA965-Y-F-M-. This TO-92MOD packaged device offers a 120V collector-emitter breakdown voltage and a continuous collector current capability of 800mA. It features a transition frequency of 120MHz and a maximum power dissipation of 900mW. With a minimum DC current gain (hFE) of 80 at 100mA and 5V, this transistor is suitable for applications requiring reliable amplification and switching. Key parameters include a collector cutoff current of 100nA (ICBO) and a Vce(sat) of 1V at 50mA/500mA. The device is supplied in bulk packaging and is designed for through-hole mounting. Its specifications make it a component choice for general-purpose amplification and switching circuits within consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 100mA, 5V |
| Frequency - Transition | 120MHz |
| Supplier Device Package | TO-92MOD |
| Current - Collector (Ic) (Max) | 800 mA |
| Voltage - Collector Emitter Breakdown (Max) | 120 V |
| Power - Max | 900 mW |
Request a Quote
Clients Also Buy
2SD1407A-Y(F)
TRANS NPN 100V 5A TO220NIS
TTC012(Q)
TRANS NPN 375V 2A PW-MOLD2
2SA1162S-Y, LF(D
TRANS PNP 50V 0.15A SMINI
