2SA965-O(TE6,F,M)
TRANS PNP 120V 0.8A TO92MODManufacturer: Toshiba Semiconductor and Storage
Categories: Single Bipolar Transistors
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Toshiba Semiconductor and Storage PNP Bipolar Junction Transistor, part number 2SA965-O-TE6-F-M-. This general-purpose switching and amplification component features a 120V collector-emitter breakdown voltage and a maximum collector current of 800mA. The device offers a minimum DC current gain (hFE) of 80 at 100mA and 5V, with a transition frequency of 120MHz. Dissipation is rated at 900mW, and it operates at junction temperatures up to 150°C. The transistor is provided in a TO-92MOD (TO-226-3, TO-92-3 Long Body) package suitable for through-hole mounting. Applications include power management, audio amplification, and general-purpose switching in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 100mA, 5V |
| Frequency - Transition | 120MHz |
| Supplier Device Package | TO-92MOD |
| Current - Collector (Ic) (Max) | 800 mA |
| Voltage - Collector Emitter Breakdown (Max) | 120 V |
| Power - Max | 900 mW |
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