2SA965-O,F(J
TRANS PNP 120V 0.8A TO92MODManufacturer: Toshiba Semiconductor and Storage
Categories: Single Bipolar Transistors
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Toshiba Semiconductor and Storage's 2SA965-O-F-J is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a 120V collector-emitter breakdown voltage and a maximum continuous collector current of 800mA. With a transition frequency of 120MHz and a power dissipation of 900mW, it is suitable for use in audio amplifiers, power supply circuits, and control systems. The minimum DC current gain (hFE) is specified at 80 at 100mA and 5V. The transistor is housed in a TO-92MOD package for through-hole mounting. Industries utilizing this component include consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 100mA, 5V |
| Frequency - Transition | 120MHz |
| Supplier Device Package | TO-92MOD |
| Current - Collector (Ic) (Max) | 800 mA |
| Voltage - Collector Emitter Breakdown (Max) | 120 V |
| Power - Max | 900 mW |
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