2SA949-Y(TE6,F,M)
TRANS PNP 150V 0.05A TO92MODManufacturer: Toshiba Semiconductor and Storage
Categories: Single Bipolar Transistors
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Toshiba Semiconductor and Storage offers the 2SA949-Y-TE6-F-M-, a PNP bipolar junction transistor. This device features a 150V collector-emitter breakdown voltage and a maximum collector current of 50 mA. With a transition frequency of 120 MHz, it is suitable for amplification and switching applications. The 2SA949-Y-TE6-F-M- has a maximum power dissipation of 800 mW and a minimum DC current gain (hFE) of 70 at 10 mA and 5V. It is provided in a TO-92MOD package, designed for through-hole mounting. This component finds application in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 800mV @ 1mA, 10A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 10mA, 5V |
| Frequency - Transition | 120MHz |
| Supplier Device Package | TO-92MOD |
| Current - Collector (Ic) (Max) | 50 mA |
| Voltage - Collector Emitter Breakdown (Max) | 150 V |
| Power - Max | 800 mW |
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